Solar Energy, Vol.188, 1-9, 2019
Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model
In this work, a four-terminal AlxGa1-x As/CuInGaSe2 tandem structure has been proposed by analytical model. To develop this model, the real experimental data for CIGS and AlxGa1-xAs cells has been used. Conversion efficiency of optimized Al0.42Ga0.58As/CuInGaSe2 tandem solar cell achieved to 37.1%. Our model estimates the optimum bandgap of AlxGa1-x. As as top cell is in the range of 1.85-2 eV. The optimized thickness of Al0.31Ga0.69As in tandem structure is 5 mu m, which decreases to 0.5 gm by light trapping technique. Moreover, we extended our model by the consideration of threading dislocation density in AlxGa1-xAs layer.