Self-erasable titanium oxide resistive memory devices

Jingon Jang; Han-Hyeong Choi; Minsung Kim; Jai Kyeong Kim; Seungjun Chung; Jong Hyuk Park

Journal of Industrial and Engineering Chemistry, Vol.78, 338-343, October, 2019

DOI10.1016/j.jiec.2019.05.036 Export Citation

Self-erasable titanium oxide resistive memory devices

Jingon Jang¹, Han-Hyeong Choi^{2, 3}, Minsung Kim^{2, 4}, Jai Kyeong Kim², Seungjun Chung², and Jong Hyuk Park^{2, †}

¹KU-KIST Graduate School of Converging Science and Technology, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
²Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
³School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea
⁴Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea

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We fabricated a titanium oxide (TiO2) resistive memory device utilized to naturally erasable device with a simple cross-bar array structure inhibiting sneak paths using selecting property. The Al/TiO2/Al memory device showed conventional nonvolatile and bipolar resistive switching properties with a vacancy-based drift conduction procedure. The conducting filament could be removed through redistribution of the oxygen vacancy to the active bulk region resulting in self-erasable properties, which have made it possible to guide unwanted information to be removed naturally. This self-erasable memory device has the potential to be utilized for the storage of susceptible information which should be eliminated after a sufficient length of time.

Keywords:Resistive memory;Self-erasable property;Titanium oxide;Oxygen vacancy;Conducting filament;Temporary data storage

[References]

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Cheng XF, Hou X, Zhou J, Gao BJ, He JH, Li H, Xu QF, Li NJ, Chen DY, Lu JM, Small, 14, 170366 (2018)
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Bai Y, Wu H, Wu R, Zhang Y, Deng N, Yu Z, Qian H, Sci. Rep., 4, 5780 (2014)
Rani A, Velusamy DB, Kim RH, Chung K, Mota FM, Park C, Kim DH, Small, 12, 6167 (2016)
Lim EW, Ismail R, Electronics, 4, 586 (2015)
Kim GH, Lee JH, Ahn Y, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS, Adv. Funct. Mater., 23(11), 1440 (2013)
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[1] Yang Y, Choi SH, Lu W, Nano Lett., 13, 2908 (2013)

[2] Scott JC, Bozano LD, Adv. Mater., 19(11), 1452 (2007)

[3] Cheng XF, Hou X, Zhou J, Gao BJ, He JH, Li H, Xu QF, Li NJ, Chen DY, Lu JM, Small, 14, 170366 (2018)

[4] Waser R, Aono M, Nat. Mater., 6(11), 833 (2007)

[5] Yu S, Chen HY, Gao B, Kang J, Wong HSP, ACS Nano, 7, 2320 (2013)

[6] Goux L, Valov I, Phys. Status Solidi A-Appl. Res., 213, 274 (2016)

[7] Bai Y, Wu H, Wu R, Zhang Y, Deng N, Yu Z, Qian H, Sci. Rep., 4, 5780 (2014)

[8] Rani A, Velusamy DB, Kim RH, Chung K, Mota FM, Park C, Kim DH, Small, 12, 6167 (2016)

[9] Lim EW, Ismail R, Electronics, 4, 586 (2015)

[10] Kim GH, Lee JH, Ahn Y, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS, Adv. Funct. Mater., 23(11), 1440 (2013)

[11] Walker SJ, Int. J. Advert., 33, 181 (2014)

[12] Stephens ZD, Lee SY, Faghri F, Campbell RH, Zhai C, Efron MJ, Iyer R, Schatz MC, Sinha S, Robinson GE, PLoS Biol., 13, e10021 (2015)

[13] Pouyanfar S, Yang Y, Chen SC, Shyu ML, Iyengar SS, ACM Comput. Surv., 51, 10 (2018)

[14] Newman AL, Science, 347(6221), 507 (2015)

[15] Waser R, Dittmann R, Staikov G, Szot K, Adv. Mater., 21(25-26), 2632 (2009)

[16] Seok JY, Song SJ, Yoon JH, Yoon KJ, Park TH, Kwon DE, Lim H, Kim GH, Jeong DS, Hwang CS, Adv. Funct. Mater., 24(34), 5316 (2014)

[17] Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huo Z, Liu M, Nanoscale, 5, 4785 (2013)

[18] Ji Y, Cha AN, Lee SA, Bae S, Lee SH, Lee DS, Choi H, Wang G, Kim TW, Org. Electron., 29, 66 (2016)

[19] Linn E, Rosezin R, Kugeler C, Waser R, Nat. Mater., 9(5), 403 (2010)

[20] Lee MJ, Lee D, Cho SH, Hur JH, Lee SM, Seo DH, Kim DS, Yang MS, Lee S, Hwang E, Uddin MR, Kim H, Chung UI, Park Y, Yoo IK, Nat. Commun., 4, 2629 (2013)

[21] Chang SH, Lee SB, Jeon DY, Park SJ, Kim GT, Yang SM, Chae SC, Yoo HK, Kang BS, Lee MJ, Noh TW, Adv. Mater., 23(35), 4063 (2011)

[22] Shin J, Kim I, Biju KP, Jo M, Park J, Lee J, Jung S, Lee W, Kim S, Park S, Hwang H, J. Appl. Phys., 109, 033712 (2011)

[23] Liu X, Sadaf SM, Son M, Shin J, Park J, Lee J, Park S, Hwang H, Nanotechnology, 22, 475702 (2011)

[24] Ma H, Feng J, Lv H, Gao T, Xu X, Luo Q, Gong T, Yuan P, Nanoscale Res. Lett., 12, 118 (2017)

[25] Huang CH, Chou TS, Huang JS, Lin SM, Chueh YL, Sci. Rep., 7, 2066 (2017)

[26] Park SH, Lee JP, Jang JS, Rhu H, Yu H, You BY, Kim CS, Kim KJ, Cho YJ, Baik S, Lee W, Nanotechnology, 24, 295202 (2013)

[27] Bousoulas P, Michelakaki I, Tsoukalas D, J. Appl. Phys., 115, 034516 (2014)

[28] Pham KN, Hoang VD, Tran CV, Phan BT, Adv. Nat. Sci. Nanosci. Nanotechnol., 7, 015017 (2016)

[29] Jeong HY, Kim YI, Lee JY, Choi SY, Nanotechnology, 21, 115203 (2010)

[30] Xiao N, Villena MA, Yuan B, Chen S, Wang B, Elias M, Shi Y, Hui F, Jing X, Scheuermann A, Tang K, Mclntyre PC, Lanza M, Adv. Funct. Mater., 27, 170038 (2017)

[31] Jeong HY, Lee JY, Choi SY, Appl. Phys. Lett., 97, 042109 (2010)

[32] Jeong HY, Lee JY, Choi SY, Adv. Funct. Mater., 20(22), 3912 (2010)

[33] Jeong HY, Kim SK, Lee JY, Choi SY, Appl. Phys. A-Mater. Sci. Process., 102, 967 (2011)

[34] Zafar S, Jones RE, Jiang B, White B, Chu P, Taylor D, Gillespie S, Appl. Phys. Lett., 73, 175 (1998)

[35] Menzel S, Waters M, Marchewka A, Bottger U, Dittmann R, Waser R, Adv. Funct. Mater., 21(23), 4487 (2011)