화학공학소재연구정보센터
Solid-State Electronics, Vol.159, 71-76, 2019
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon because a strong polarization switching is needed for the steep slope. We found that the sub-thermal SS degrades with the cycling measurements, which is assumed to be caused by the trap charging in the ferroelectric oxide layer. The tradeoff between polarization and charge trapping is responsible for the subthreshold behavior of the device.