화학공학소재연구정보센터
Thermochimica Acta, Vol.670, 123-127, 2018
Study of doping and annealing effects on thermal properties of SnxSb2Sy (1 <= x <= 3, 4 <= y <= 6) sulfosalts thin films by electro-pyroelectric technique
SnSb2S4, Sn2Sb2S5 and Sn3Sb2S6 thin films were obtained by a vacuum thermal evaporation method. The films were thermally annealed at 200 degrees C in tube furnace. Their structural and thermal properties are studied by X-ray diffraction and electro-pyroelectric technique. The X-ray diffraction analysis revealed that the polycrystalline SnxSb2Sy films were successfully obtained using an annealing temperature of 200 degrees C. The thermal measurements show that these thin films have thermal conductivity ranging from 30.4 to 79.2 Wm(-1) K-1 and the highest value belongs to film of SnSb2S4 material annealed at 200 degrees C. Also, It is found that SnxSb2Sy films exhibit thermal diffusivity values situated in (4.20-20.5)10(-6) m(2)s(-1) domain. The most significant result of the present study is that SnSb2S4 thin film annealed at 200 degrees C seems a good candidate for solar cell application.