Journal of Crystal Growth, Vol.507, 384-388, 2019
Atomic step-flow epitaxy of low defect InGaAs islands on Si(111) by micro-channel selective area MOVPE
We report successful growth of threading dislocation free InGaAs island arrays on masked Si(1 1 1) substrate by micro-channel selective area growth (MC-SAG). Developed from InGaAs/InAs/Si growth scheme (Deura et al., 2009) , InGaAs nucleation and pillar layer are originally introduced before the lateral growth in order to reduce the InGaAs/InAs lattice mismatch, leading to significant improvement in both crystal quality and uniformity. Unique atomic step patterns along < 1 1 0> directions are observed on InGaAs (1 1 1) facet by AFM, demonstrating atomic layer by layer growth. No threading dislocation is detected. This scheme can be a very promising approach for high level III-V on Si integration.