화학공학소재연구정보센터
Applied Surface Science, Vol.458, 700-704, 2018
Preparation and optical properties of higher manganese silicide, (Mn,Fe)Si-gamma, thin films
In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSi gamma and (Mn,Fe) Si-gamma, were investigated. Band structure calculations were performed using the Mn11Si19 and (Mn31/44Fe13/ (44))(11)Si-19 crystal structure models of HMS to predict the conduction types and band gaps of MnSi gamma and Mn0.7Fe0.3Si gamma, respectively. Using a pulsed laser deposition method, p-type MnSi gamma and n-type Mn0.7Fe0.3Si gamma thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSi gamma thin film and 0.83(2) eV for the Mn0.7Fe0.3Si gamma thin film. These results demonstrate the potential of (Mn,Fe)Si-gamma-based near-infrared absorption solar cells.