화학공학소재연구정보센터
Solid-State Electronics, Vol.147, 44-50, 2018
A review on terahertz photogalvanic spectroscopy of Bi2Te3- and Sb2Te3-based three dimensional topological insulators
The paper overviews experimental and theoretical studies of photogalvanic effects induced in BiSbTe-based three dimensional topological insulators by polarized terahertz radiation. We present the state-of-the-art of this subject, including most recent and well-established results. We discuss a phenomenological theory based on symmetry arguments and models illustrating the photocurrents origin. We give a brief glimpse of the underlying microscopic theory, as well as an overview of the main experimental results.