화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.165, No.4, H3093-H3098, 2018
Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air
We develop a cost-effective vacuum ultraviolet (VUV) irradiation in air combined with an in situ bonding process. The whole bonding process does not require high vacuum environments. Strong bonding strengths for Si/Si, Si/glass, and glass/glass pairs were achieved with the assistance of annealing at 200 degrees C. There was no crack or defect at the bonding interfaces. The excellent optical transparency of the bonded glass/glass pairs was demonstrated in the UV-visible range. On the basis of the surface and bonding interface characterizations, the low-temperature bonding mechanism was investigated and discussed. Similar to the plasma activated bonding, the internal water stress corrosion plays a crucial role in the mechanical evolution of bonding interface between the VUV irradiated surfaces during annealing. This facile bonding method offers great potential for silicon- and glass- based homo/heterogeneous integrations in microelectronics, optoelectronics and microfluidics. (C) The Author(s) 2018. Published by ECS.