화학공학소재연구정보센터
Journal of Crystal Growth, Vol.490, 97-103, 2018
Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
A 99.6% relaxed InSb layer is grown on a 6 degrees offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90 degrees misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 mu m InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm(2)/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 degrees C maintained blackbody. (C) 2018 Elsevier B.V. All rights reserved.