화학공학소재연구정보센터
Journal of Crystal Growth, Vol.477, 45-49, 2017
Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
The growth of in plane highly mismatched GaSb nanotemplates free of threading dislocations on GaAs (001) substrate is demonstrated using selective area growth. We report a detailed comparison of the crystalline quality of GaSb elaborated either as 2D layers or selectively grown inside 100 nm wide stripes directed along [110] or [1-10]. By means of transmission electron microscopy, we show that the GaSb layer grown on a bare substrate contains an important density of threading dislocations, while the one grown inside nano-openings is free from threading dislocations. Moreover, we demonstrate that the GaSb layers in both growth modes are relaxed through a Lomer dislocation network at the interface, which is characterized using the full width at half maximum of the GaSb X-ray diffraction peak for different reflections. Finally, we demonstrate that these GaSb nanotemplates can be used for subsequent epitaxial growth of high structural quality strained InAs nanowires. (C) 2016 Published by Elsevier B.V.