화학공학소재연구정보센터
Applied Surface Science, Vol.427, 605-608, 2018
High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode
We present the effect of interface quality on the performance of InAsSb based hetero n-i-p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of similar to 1.5 x 10(9) cmHz(1/2)W(-1) can be achieved at room temperature, and it can be increased to similar to 4.0 x 10(9) cmHz(1/2)W(-1) at 250 K. (C) 2017 Elsevier B.V. All rights reserved.