Journal of Crystal Growth, Vol.476, 99-106, 2017
Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films
Three types of unidentified stacking faults with emission wavelengths of over 500 nm were confirmed in 4H-SiC epitaxial films and characterized using grazing incident X-ray topography, transmission electron microscopy, and high-resolution scanning transmission electron microscopy. Photoluminescence spectroscopy measurements revealed that the SFs had emissions at around 550, 530, and 520 nm. Characterization indicated that the SFs included one Frank partial dislocation and several Shockley partial dislocations, although the determined stacking sequences of the SFs mainly consisted of the basic units of the 3C-structure. It was clarified that the SFs originated from narrow SFs with the same stacking sequence in the substrates. (C) 2017 Elsevier B.V. All rights reserved.