Journal of Colloid and Interface Science, Vol.505, 148-153, 2017
Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets
In this work, hexagonal MoSe2 nanosheets were prepared by hydrothermal process. Next, the resistive switching memory behaviour of single MoSe2 nanosheets was further investigated. We observed that MoSe2 nanosheets based memory device show reproducible and stable bipolar resistive switching memory characteristics. Through the analysis for conductive mechanism, the formation and rupture of nanoscale Ag filament inside the MoSe2 nanosheets is suggested to explain the memory behaviour. (c) 2017 Elsevier Inc. All rights reserved.