Chemical Physics Letters, Vol.687, 14-18, 2017
Experimental study on an evaporation process to deposit MoO2 microflakes
Experimental study on one evaporation process to deposit MoO2 microflakes on SiO2/Si substrate is reported. A chemical mechanism based on disproportionation reaction has been suggested and oxides MoO3-x been found to be active precursors. As-prepared rhomboidal crystals have large sizes and high crystallinity, the size lengths of which can excess 200 mu m and thicknesses of which are 20-100 nm. Uniform MoS2 films can grow on their surfaces in suitable sulfuration process. The fine crystallinity, low evaporation rate and conductive property of these MoO2 crystals make them potential alternative precursor/substrate for growth of 2D chalcogenides MoX2 (X = S, Se, Te). (C) 2017 Elsevier B.V. All rights reserved.