화학공학소재연구정보센터
Solid-State Electronics, Vol.130, 28-32, 2017
Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate
A further leakage reduction of AlGaN/GaN HEMTs with cap gate (CG-HEMTs) has been achieved by optimizing the gate structure and the gate etching process. The optimized CG-HEMTs single finger power HEMTs deliver I-Dsmax = 533 mA/mm at least with gate length of 0.5um and show a median gate leakage current of 20 nA/mm 25 degrees C measured at a drain voltage of 200 V. The breakdown voltage (BV) of CG-HEMTs was evaluated by the variation of drain-to-gate spacing (L-DG) larger than 8 gm. Furthermore, we show that the forward voltage of CG-HEMTs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance. (C) 2017 Elsevier Ltd. All rights reserved.