화학공학소재연구정보센터
Applied Surface Science, Vol.401, 142-145, 2017
Growth of of layered superconductor beta-PdBi2 films using molecular beam epitaxy
Bulk,beta-PdBi2 layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow beta-PdBi2 films from a single,beta-PdBi2 triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk, beta-PdBi2 crystals. Ability to grow the beta-PdBi2 films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material. (C) 2017 Elsevier B.V. All rights reserved.