Applied Surface Science, Vol.398, 125-129, 2017
Growth and atomic structure of tellurium thin films grown on Bi2Te3
We have grown tellurium (Te) thin films on Bi2Te3 and investigated the atomic structure. From low energy electron diffraction (LEED) measurements, we found that the Te films are [10 (1) over bar0]-oriented with six domains. A detailed analysis of the reflection high-energy electron diffraction (RHEED) pattern revealed that the films are strained with the in-plane lattice constant compressed by similar to 1.5% compared to the bulk value due to the epitaxy between Te and Bi2Te3. These films will be interesting systems to investigate the predicted topological phases that occur in strained Te. (C) 2016 Elsevier B.V. All rights reserved.