화학공학소재연구정보센터
Advanced Materials, Vol.28, No.42, 9408-9408, 2016
Te-Doped Black Phosphorus Field-Effect Transistors
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving air-stable black-phosphorus devices.