Chemical Physics Letters, Vol.662, 102-106, 2016
Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon
We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.