화학공학소재연구정보센터
Solid-State Electronics, Vol.123, 58-62, 2016
Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal
In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 mu m and doping concentration of 3.3 x 1015 cm(-3). According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm(2) at 3 V and a specific on-resistance (Rsp-on) of 7.58 m Omega cm(2). Different FLRs parameters have no effect on the forward device performance. (C) 2016 Elsevier Ltd. All rights reserved.