화학공학소재연구정보센터
Advanced Materials, Vol.28, No.25, 5126-5132, 2016
Layer Engineering of 2D Semiconductor Junctions
A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.