화학공학소재연구정보센터
Advanced Materials, Vol.28, No.24, 4803-4810, 2016
An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes
High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.