화학공학소재연구정보센터
Current Applied Physics, Vol.16, No.7, 793-798, 2016
High-field nonlinear conductivities of n- and p-type GaAs thin films in the terahertz region
We investigated high-field terahertz (THz) responses and the nonlinear conductivities of n- and p-type GaAs thin films in the THz region. As the THz pulse intensity was increased to 59 mu J/cm(2), the THz transmission of the n-type GaAs thin film was significantly increased, more than that of the p-type film. This result is correlated with the conductivity of the electronic system caused by scattering processes. Intervalley scattering was dominant in n-type GaAs, whereas hot-cold hole interactions and intervalence band transitions were the main factors reducing the conductivity in p-type GaAs. In addition, we extracted the frequency-domain conductivity of the n- and p-type GaAs thin films and used the Drude -Smith model to explain non-Drude-like behavior due to high-field excitation. (C) 2016 Elsevier B.V. All rights reserved.