화학공학소재연구정보센터
Advanced Materials, Vol.28, No.13, 2547-2547, 2016
Monolithic 3D CMOS Using Layered Semiconductors
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.