화학공학소재연구정보센터
Advanced Materials, Vol.27, No.13, 2195-2195, 2015
Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo luminescence (up to approximate to 100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.