화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.602, No.1, 244-250, 2014
Fabrication and Crystal Structure Analysis of a CIGS Solar Cell Absorber by Thermal Annealing of Sputtered CIG Precursors Deposited with a Se Layer
Various Cu(In,Ga)Se-2 (CIGS) films were prepared by using in-line sputter for CIG precursor and evaporator for selenization. Deposition parameters are substrate temperature at sputtering process, post annealing temperature (400 similar to 500 degrees C) and annealing method (thermal furnace and high-temperature in-situ XRD). Temperature dependent XRD patterns of the samples were measured with high temperature option and this pattern shows that post annealing at 400 similar to 500 degrees C is necessary for CIGS absorber deposition with no second phase by in-line sputtering. The CIGS film which is annealed at 500 degrees C shows good crystallographic property and there is no second phase like Cu2-xSe.