Molecular Crystals and Liquid Crystals, Vol.601, No.1, 245-252, 2014
Preparation of Transparent Metal Films, Gallium-Doped Zinc-Oxide (Ga2O3)(x) (ZnO)(100-x) Films by Using Facing Target Sputtering System
(Ga2O3)(x)(ZnO)(100-x), x = 3, 5, 7, 9wt.%, (GZO) films were prepared at room temperature by using a conventional rf-magnetron sputtering method. Their electrical resistivity was investigated as a function of the Ga2O3 content. The GZO film with x = 7wt.%, shows the lowest resistivity of 1.5x10(-3)omega. cm. This GZO films were also prepared at various substrate temperatures from room temperature to 400 degrees C, Their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of 4.5x10(-4)omega.cm was obtained in the film prepared at the substrate temperature of 300 degrees C. In addition, we found that the GZO films prepared by using facing target sputtering (FTS) system showed a dramatically improved conductivity as compared with that of the film prepared by the conventional sputtering system. In particular, we also found that the lowest resistivity of 2.8x10(-4)omega.cm that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of 300 degrees C by using the facing target sputtering (FTS) system.