Molecular Crystals and Liquid Crystals, Vol.587, No.1, 121-128, 2013
Studies on Pressure-Dependent Electrical Resistivity of MoSe2-Te-x(x) Single Crystals
Electrical resistivity of 2H-MoSe2-xTex (x = 0.25, 0.5, 1, 1.5, 1.75) single crystals grown by chemical vapor transport technique have been measured in the pressure range 0.1-8 GPa. It is noticed that all these materials show a decrease in resistivity with increase in applied hydrostatic pressure. The materials become more and more metallic in nature as the pressure increases. The obtained results have been discussed in detail on the basis of energy band theory of semiconductors.