화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.565, 159-166, 2012
Characteristics of CuInSe2 Superstrate Thin Film Solar Cell with Various Back Electrodes
The maximum efficiency of Cu(In-x,Ga1-x)Se-2(CIS) superstrate thin film solar cell is smaller than that of CIS substrate thin film solar cell, but its device fabrication price is lower because the number of thin-film process is fewer. In addition, CIS absorber layer is fabricated through binary process to reduce the process temperature and processing price. In this study, CIS superstrate thin film solar cell was fabricated to reduce the device fabrication cost and CIS absorber layer was deposited by the binary process. By using Sodalime Glass (SLG), Al:ZnO and ITO were deposited on n-type transparent electrode layer in the upper part. CIS absorber was individually deposited by InSe(In2Se3) and CuSe in a binary type by using Molecular Beam Epitaxy (MBE). The deposited sample went through heat process, and then electrode was created to fabricate the device. In order to identify the structural and electrical characteristics of the various transparent electrodes, CIS absorber and CIS solar cell device, analysis was conducted by using X-ray Diffractometer(XRD, Bulk, PANalytical), Field Emission Scanning Electron Microscope (FE-SEM, S-4800, HITACHI), Inductively Coupled Plasma (ICP, ICPS-8100, Shimadzu), Secondary Ion Mass Spectrometry (SIMS, IMS 6F, CAMECA) and solar-simulator (AM1.5 g, 100 mW/cm(2)).