화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.551, 9-13, 2011
Large Threshold Voltage Shifts of Nanostructured-Thin Film ZnS:Mn Electroluminescent Devices
We have studied electro-optical properties of nanostructured-thin film electroluminescent devices(NS-TFELD) with a nanosized-tantalum pentoxide(Ta2O5) insulator layer inserted into the ZnS:Mn phosphor layer. A large threshold voltage shift Delta V-th has been observed in NS-TFELD. The change in the transferred charge Delta Q seems to relate to the large shifts of Delta V-th, implying that the change in interface states due to the nanosized oxide layer will be responsible for the shifts of V-th.