화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.504, 124-132, 2009
Mobility Improvement in N-Type Organic FET with Hetero-Layered Structure
The field-effect mobility in n-type fullerene field-effect transistors was improved by the hetero-layered structure including the interfacial layer of organic semiconductor between the insulator and channel semiconductor. Various types of hole transporting material were employed for the interfacial layer. The device showed high electron mobility exceeding 1 cm(2)/Vs that was better than that for the substrates with conventional surface treatments, for example, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). These results suggest that the electron-donating character of the hole transporting materials leads to filling the electron traps at the insulator interface.