화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.374, 167-172, 2002
Development of sub-half micrometric structures with high aspect ratio using a multi-layer lithography e-beam process and plasma dry etching
In this work we are using the AR-P 322 (All Resist GmbH) DQN-novolac photoresist, with 3mum resolution specified by the manufacturer in the development of sub micrometric structures with high aspect ratios (10:1). In order to obtain these structures (sub-half micrometric and nanometric) we are studying the possible application of electron beam lithography and plasma etching. The resolution limit of the photoresist AR-P 322 is increased to 0.25 mum (nanometric resolution), using an electron beam spot size of 50 nm and dry development.