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Journal of the Electrochemical Society, Vol.163, No.2, D24-D32, 2016
Further Research on the Silicon Via Filling Mechanism Using an Arbitrary Lagrange-Eulerian (ALE) Method
Through silicon via (TSV) is one of the key technologies for the three-dimensional (3D) IC/Si integration. Void-free filling is vitally important for enhancing the reliability of the 3D IC integration. Based on the model in our previous study [ Journal of The Electrochemical Society, 2015, 162(10), D540-D549], further researches on the blind via filling mechanism are studied. In order to achieve the void-free filling profile, effects of via dimension, via shape and additives properties on the blind via filling model are investigated. When the via dimension is empty set 40 mu m x 40 mu m or empty set 40 mu m x 80 mu m, "V" shape filling profile appears. "V" shape filling profile appears when an inward sloping via (epsilon < 0 degrees) is used. When the adsorption rate constant of accelerator and suppressor are 5 x 10(-6) and 1 x 10(-4) m/s, "V" shape filling profile appears. "V" shape filling profile would cause the void-free filling profile. Through via filling model is built to analyze the through via filling mechanism. (C) 2015 The Electrochemical Society.