화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.24, No.12, 715-719, December, 2014
전압인가 LBL법을 이용한 (PDDA/SiO2) 박막 제조
Fabrication of (PDDA/SiO2) Thin Film by an Applying Voltage Layer-By-Layer Self Assembly Method
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(PDDA/SiO2) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged SiO2 nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) selfassembly method. In this study, the microstructure and optical properties of the (PDDA/SiO2) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and SiO2 solution, the thickness of the (PDDA/SiO2)10 thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and SiO2 solution increased. Especially, when the voltage was applied to the Pt electrode in the SiO2 solution, the thickness increase of the (PDDA/SiO2) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/SiO2) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/SiO2)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.
  1. Chrysicopoulou P, Davazoglou D, Trapalis C, Kordas G, Thin Solid Films, 323(1-2), 188 (1998)
  2. Takeuchi M, Itoh T, Nagasaka H, Thin Solid Films, 51, 83 (1978)
  3. Yeung KS, Lam YW, Thin Solid Films, 109, 169 (1983)
  4. Kim JH, Shiratori S, Jpn. J. Appl. Phys., 44, 7588 (2005)
  5. Tsuge Y, Kim JH, Sone Y, Kuwaki O, Shiratori S, Thin Solid Films, 516, 2463 (2008)
  6. Kim HJ, Jeong KJ, Bae DS, Korean J. Mater. Res., 22(5), 249 (2012)
  7. Decher G, Hong JD, Schmitt J, Thin Solid Films, 831, 210 (1992)
  8. Sczybowski J, Brauer G, Teschner G, Zmelty A, Surf. Coat. Technol., 98, 1460 (1998)
  9. Yen A, Smith HI, Schattenbyrg ML, Taylor GN, J. Electrochem. Soc., 139, 616 (1992)
  10. Luyer CL, Lou L, Bovier C, Plenet JC, Dumas JG, Mugnier J, Opt. Mater., 18, 221 (2001)
  11. Hattori H, Adv. Mater., 13(1), 51 (2001)
  12. Sohn BH, Kim TH, Char K, Langmuir, 18(21), 7770 (2002)
  13. Caruso RA, Susha A, Caruso F, Chem. Mater., 13, 400 (2001)
  14. Caruso F, Adv. Mater., 13(1), 11 (2001)
  15. Stathatos E, Lianos P, J. Phys. Chem. B, 105, 3468 (2001)
  16. Kleinfeld ER, Ferguson GS, Chem. Mater., 8, 1575 (1996)
  17. Kyung KH, Shiratori S, Jpn. J. Appl. Phys., 50, 025602 (2011)
  18. Matsuda M, Shiratori S, Langmuir, 27(7), 4271 (2011)
  19. Wang Y, Wang XJ, Guo Y, Cui ZC, Lin Q, Yu WZ, Liu LY, Xu L, Zhang DM, Yang B, Langmuir, 20(21), 8952 (2004)
  20. Ngankam AP, Van Tassel PR, Langmuir, 21(13), 5865 (2005)
  21. Wu FH, Hu AC, Wang LW, Xu JJ, Xian YZ, Tian Y, Jin LT, Electrochem. Commun., 10, 630 (2008)
  22. Zhang P, Qian JW, Yang Y, An QF, Liu XQ, Gui ZL, J. Membr. Sci., 320(1-2), 73 (2008)
  23. Ko YH, Kim YH, Park J, Nam KT, Park JH, Yoo PJ, Macromolecules, 44(8), 2866 (2011)