화학공학소재연구정보센터
Applied Surface Science, Vol.314, 570-574, 2014
Properties of atomic-layer-deposited ultra-thin AIN films on GaAs surfaces
Properties and passivation effect of ultra-thin AIN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AIN layers. Atomic force microscopy shows that an ultra-thin AIN layer does not substantially alter the surface morphology. (C) 2014 Elsevier B.V. All rights reserved.