화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.12, No.11, 835-839, November, 2002
졸-겔법으로 Pt/Ti/SiO 2 /Si 기판위에 제작된 (Bi,La)Ti 3 O 12 강유전체 박막의 특성 연구
Charaterization of (Bi,La)Ti 3 O 12 Ferroelectric Thin Films on Pt/Ti/SiO 2 /Si Substrates by sol-gel Method
E-mail:
Metal-Ferroelectric-Metal(MFM) capacitors were prepared using Bi 3.3 La 0.7 Ti 3 O 12 (BLT) ferroelectric thin films which were spin coated on Pt/Ti/SiO 2 /Si substrates by the Sol-Gel method. BLT thin films annealed at above 650 ? C showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from 650 ? C to 700 ? C . In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= Pr + +Pr ?) and leakage current of the BLT film annealed at 650 ? C were about 29.3 μ C/cm 2 and 2.3 \times10 ?8 A/cm 2 at 3V. There were no distinct changes in the retention charges after 10 10 polarization switching cycles, showing good fatigue property of the annealed BLT films.
  1. Tuttle BA, Mater. Res. Bull., 12, 40 (1987)
  2. Scott JF, Paz-de Araujo CA, Science, 246, 1400 (1989)
  3. Auciello O, Ramesh R, MRS Bull., 21, 31 (1996)
  4. Melnick BM, Gregory J, paz-de Araujo CA, Inter. Ferroelectric, 11, 145 (1995)
  5. Nakamura T, Nakao Y, Kamisawa A, Takasu H, Ferroelectrics, 11, 161 (1995)
  6. Park BH, Kang BS, Bu SD, Noh TW, Lee J, Jo W, Nature, 401, 682 (1999)
  7. Nakamura T, Nakao Y, Kamisawa A, Takasu H, Jpn. J. Appl. Phys., 33, 5207 (1994)
  8. Choi T, Kim Y, Lee J, J. Korean Phys. Soc., 40, 188 (2002)
  9. Paz de Araujo CA, Cuchiaro JD, McMillan LD, Scott MC, Nature, 374, 627 (1995)
  10. Chu PY, Jones RE, Jr, Zurcher P, Taylor DJ, Jiang B, Cillespie SJ, J. Mater. Res., 11, 1065 (1996)
  11. Aoki M, Mushiga M, Itoh A, Eshita T, Arimoto Y, 1999 Sympo. VLSI Technol. Digest of Tech. Papers (Kyoto, june), 145, (1999) (1999)
  12. Takashi M, Hiroyuki Y, Hitoshi W, Paz de Araujo CA, Jpn. J. Appl. Phys., 34, 5233 (1998)
  13. Okamoto K, Tokumitsu E, Appl. Phys. Lett., 76, 2609 (2000)
  14. Hwang SH, Chang HJ, J. Korean Phys. Soc., 41, 139 (2002)