Korean Journal of Materials Research, Vol.13, No.8, 497-502, August, 2003
Si 기판에서 원자층 화학 기상 증착법으로 제조된 Al2O3 및 ZrO2 유전 박막의 결정학적 특성 및 계면 구조 평가
Crystallographic and Interfacial Characterization of Al 2 O 3 and ZrO 2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate
E-mail:
Crystallographic characteristics and interfacial structures of Al 2 O 3 and ZrO 2 dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the Al 2 O 3 film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the ZrO 2 film crystallized during deposition at a low temperature of ∼ 300 ? C was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X ZrO 2 O 3 and ZrO 2 films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.
Keywords:crystallographic characteristic;interfacial structure;and dielectric films;atomic layer chemical vapor deposition;phase identification
- Singer P, Semicond. Int., 23, 66 (2000)
- Baliga J, Semicond. Int., 23, 83 (2000)
- Higashi GS, Flemming CG, Appl. Phys. Lett., 55, 1963 (1989)
- Gusev EP, Copel M, Cartier E, Baumvol IJR, Krug C, Gribelyuk MA, Appl. Phys. Lett., 76, 176 (2000)
- Park DG, Cho HJ, Lim KY, Lim C, Yeo IS, Roh JS, Park JW, J. Appl. Phys., 89, 6275 (2001)
- Alers GB, Werder DJ, Chabal Y, Lu HC, Gusev EP, Garfunkel E, Gustafsson T, Urdahl RS, Appl. Phys. Lett., 73, 1517 (1998)
- Ikeda R, Tanaka H, Uyama H, Kobayashi S, Macromol. Rapid Commun., 19(8), 423 (1998)
- Shappir J, Anis A, Pinsky I, IEEE Trans. Electron Devices, 33, 442 (1986)
- Copel M, Gribelyuk MA, Gusev E, Appl. Phys. Lett., 76, 436 (2000)
- Lim KY, Park DG, Cho HJ, Kim JJ, Yang JM, Choi IS, Yeo IS, Park JW, J. Appl. Phys., 91, 414 (2002)
- Kang L, Jeon Y, Onishi K, Lee BH, Qi WJ, Nieh R, Gopalan S, Lee JC, VLSI Tech. Symp., 2000, 44
- Wilk GD, Wallace RM, Anthony JM, J. Appl. Phys., 89, 5243 (2001)
- Shindo D, Hiraga K, High-Resolution Electron Microscopy for Materials Science, Chapt. 1, Springer-Verlag, Tokyo (1998) (1998)
- Shindo D, Oikawa T, Analytical Electron Microscopy for Materials Science, Chapt. 4, Springer-Verlag, Tokyo (2002) (2002)
- Egerton RF, Electron Energy-Loss Specroscopy in the Electron Microscope 2nd edn., Plenum, New York (1996) (1996)
- Kawasaki M, Oikawa T, Ibe K, Park KH, Shiojiri M, J. Electron Microsc., 47, 335 (1998)
- Yang JM, Lee S, Park JC, Lee DW, Lee TK, Choi JT, Lee SY, Kawasaki, Oikawa T, J. Appl. Phys., 93, 855 (2003)
- Muller DA, Sorsch T, Moccio S, Baumann FH, Evans-Lutterodt K, Timp G, Nature, 399(6738), 758 (1999)
- Renault O, Gosset LG, Rouchon D, Ermolieff A, J. Vac. Sci. Technol. A, 20(6), 1867 (2002)
- Kingery WD, Introduction to Ceramics 2nd edn., John Wiley & Sons, New York (1976) (1976)
- Diffraction data, JCPDS file (1999) (1999)
- Copel M, Gribelyuk MA, Gusev EP, Appl. Phys. Lett., 76, 436 (2000)