화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.15, No.8, 518-520, August, 2005
마그네트런 스퍼터링법으로 증착한 투명전극용 Al도핑된 ZnO의 공정 분위기에 따른 구조적, 전기적, 광학적 특성비교
Dependence of the Structural, Electrical, and Optical Properties of Al-doped ZnO Films for Transparent Conductors on the Process Atmosphere in Magnetron Sputtering
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Effects of the O 2 /Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the O 2 /Ar flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the O 2 /Ar flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the O 2 /Ar flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the O 2 /Ar flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the O 2 /Ar flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the O 2 /Ar flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the O 2 /Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O 2 /Ar flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.
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