화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.17, No.12, 629-633, December, 2007
기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화
Effect of Growth Temperature on the Properties of Hydrogenation Al-doped ZnO Films
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This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4 Ω·cm, mobility of 21.9 cm2/V.s, electric charge carrier concentration of 9.35×1020 cm-3 was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.
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