화학공학소재연구정보센터
Thin Solid Films, Vol.564, 253-257, 2014
Properties of boron-rich layer formed by boron diffusion in n-type silicon
A boron-rich layer (BRL) is formed during the boron diffusion process in fabricating crystalline Si solar cells. We investigated the structural, optical, and electrical characteristics of BRL in n-type silicon. A boron emitter was formed using the BBr3 liquid source in a tube furnace at 950 degrees C. BRL had an amorphous phase. The peak concentration of boron in BRL was over 10(23) atoms/cm(3). BRL consisted of boron, silicon, and oxygen. The oxygen atoms seemed to have caused the formation of amorphous phase. BRL showed the refractive indices of 15-2.0, and the contact resistance of 0.8 m Omega cm(2). (C) 2014 Published by Elsevier B.V.