Materials Science Forum, Vol.517, 262-266, 2006
Pinning fermi level of p-GaN due to three different (Zr, Ti, and Cr) metal contact
The Current-Voltage-Temperature (I-V-T) characteristics of single layer deposition, consisting of Zr, Ti, or Cr/p-GaN Schottky diodes were determined in the temperature range 27-100 degrees C. Sputtering method was used for deposition of these metals on p-GaN. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters, the saturation current I-0 and the ideality factor eta. The barrier heights and effective Richardson coefficients were determined through activation energy plot. It was found that pinning of Fermi level occurred for these metal contacts on p-GaN with the carrier concentration of 5.6x10(17) cm(-3), where the Schottky barrier heights of Zr, Ti, or Cr/p-GaN are determined to be in the same range (similar to 0.87eV).