The interfaces formed at 850 degrees C under vacuum between polished or oxidized substrates of pressureless sintered alpha-SiC (SSiC) and Cusil, Cusil-ABA and Incusil-ABA brazing alloys have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. No chemical interaction is observed for Cusil on both SSiC substrates. In contrast, the Ti contained in the Cusil-ABA and Incusil-ABA alloys promotes the occurrence of chemical reactions at the metal/ceramic interface with both SSiC substrates. The formation of TiC and Ti5Si3 is observed for Cusil-ABA and Incusil-ABA on untreated SSiC, following the sequence SiC -> TiC -> Ti5Si3 at the metal/ceramic interface. The formation of Ti5Si3 and Cu3Ti3O, following the sequence SiC -> Ti5Si3 -> Cu3Ti3O is observed for both Ti-containing alloys on pre-oxidized SSiC. During the wetting experiments, Ti5Si3 and Cu3Ti3O detach from the ceramic surface, floating away from the ceramic/metal interface into the liquid alloy, where the latter phase partially dissolves. It is concluded that for both Ti-containing alloys in contact with pre-oxidized SSiC, the Ti remaining after the reaction with the silica film is insufficient to decrease the contact angle to the values observed for untreated SSiC or to produce a strong metal/ceramic joint.