화학공학소재연구정보센터
Materials Science Forum, Vol.483, 657-660, 2005
The role of formation and dissolution of c clusters on the oxygen incorporation during dry thermal oxidation of 6H-SiC
The mechanisms of oxygen incorporation during dry thermal oxidation of 6H-SiC wafers were investigated. Isotopic tracing of oxygen was performed by sequential oxidations in dry O-2 enriched or not in the O-18 isotope and subsequent determinations of the O-18 profiles. The results obtained with SiC substrates were compared with those of Si, evidencing different mechanisms of oxygen incorporation and transport. The gradual nature of the SiO2/SiC interface was also evidenced. A probable explanation for this gradual SiO2/SiC interface is shown to be the formation of C clusters during oxidation.