화학공학소재연구정보센터
Materials Science Forum, Vol.483, 445-448, 2005
Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 (.) 10(14) cm(-3) to 1.04 (.) 10(15) cm(-3), while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.