화학공학소재연구정보센터
Materials Science Forum, Vol.483, 373-376, 2005
Room temperature steady state and time resolved PL characterization of ion irradiation induced defects in 6H-SIC
Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ion-implantation on the photoluminescence peak at 423mn and the variation of the minority carrier lifetime (MCL).