Materials Science Forum, Vol.457-460, 1413-1416, 2004
930V, 170m Omega.cm(2) lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing
Lateral two-zone RESURF n-channel MOSFETs are demonstrated in 4H-SiC, with the improved 4H-SiC/SiO2 interface properties by nitric oxide (NO) annealing. Two-zone RESURF has been used to achieve lower on-resistance at a specific breakdown voltage with optimized surface 2 field. The maximum inversion layer field effect mobility achieved with NO annealing is 25cm(2)/V.s, 5x higher than that of the conventional dry re-oxidation process. The channel resistance is significantly reduced with the improved interface by NO annealing. The MOSFET is normally off with a low leakage current and threshold voltage around 3V. Large area devices with multi-finger geometry are also demonstrated with the current successfully scaled up to 140mA. The output characteristics exhibit excellent linear and saturation regions. The device blocks 930V and has a specific on-resistance of 170mOmega.cm(2). This is the first demonstration of lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing.