화학공학소재연구정보센터
Materials Science Forum, Vol.433-4, 551-554, 2002
Traps at the interface of 3C-SiC/SiO2-MOS-structures
Conductance method and admittance spectroscopy are employed to monitor traps at the interface of differently processed 3C- and 4H-SiC/SiO2 MOS capacitors. It is demonstrated that oxidation of 3C-SiC under NO-ambient leads to low values of the density of interface states in the entire SiC band gap.