화학공학소재연구정보센터
Materials Science Forum, Vol.433-4, 333-336, 2002
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
We present an optical method for the determination of the charge carrier concentration as well as the compensation level based on absorption measurements at room temperature in n-type 6H-SiC. Below band-gap absorption bands (BBGA) are best fitted by a Fano like shape. Calibration plots are provided for evaluation of the charge carrier concentration from the peak area of the BBGA. The compensation level is derived from the comparison of the peak area of the BBGA and the absolute peak value.