화학공학소재연구정보센터
Materials Science Forum, Vol.389-3, 477-480, 2002
Theoretical investigation of an intrinsic defect in SiC
Ab initio calculation of the local vibrational modes of a carbon pair in the silicon vacancy (V-Si+2C) shows that it cannot be the origin of the D-II photoluminescence (PL) center, however, it seems likely, that this defect gives rise to the Ramanpeaks observed at 1080 and 1435 cm(-1) in proton irradiated samples. Occupation levels of the V-Si+2C defect are also predicted to facilitate experimental confirmation.