화학공학소재연구정보센터
Materials Science Forum, Vol.389-3, 235-238, 2002
The effect of epitaxial growth on warp of SiC wafers
We investigated the effect of the epitaxial growth on the warp of SiC wafers. The wafer warp was determined by measuring the surface profile of the wafers. We found that the wafers became concave after polishing and their warp improved after H-2 etching and epitaxial growth on their Si face. However, the C face epitaxial wafer of 4H-SiC became convex.